发明名称 |
Production of a high temperature superconductor layer on a substrate for use in high energy applications comprises depositing a superconducting layer with a low growth rate |
摘要 |
Production of a high temperature superconductor layer on a substrate comprises depositing a RBa2Cu3O7 layer (2) (where R = Y, a rare earth element of the atomic number 57-71 or a mixture of these) on the substrate (1a) using a low growth rate, and depositing a XBa2Cu3O7 layer (3) (where R = Y, a rare earth element of the atomic number 57-71 or a mixture of these) on the RBa2Cu3O7 layer using a high growth rate.
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申请公布号 |
DE10248962(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
DE20021048962 |
申请日期 |
2002.10.21 |
申请人 |
THEVA DUENNSCHICHTTECHNIK GMBH |
发明人 |
NUMSSEN, KAI;KINDER, HELMUT |
分类号 |
C01G1/00;C01G3/00;C23C14/08;C23C16/40;C30B29/22;H01B12/06;H01B13/00;H01L39/24;(IPC1-7):H01L39/24;H01L39/12 |
主分类号 |
C01G1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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