发明名称 Inspection method and device manufacturing method
摘要 <p>A test pattern (20) having at least 1[deg] of symmetry on a substrate (W) using lithographic apparatus. The reflection spectrum of the test pattern is measured using scatterometer, based on which aberration amount present in lithographic apparatus is derived. An independent claim is also included for lithographic projection apparatus manufacturing method.</p>
申请公布号 EP1416328(A2) 申请公布日期 2004.05.06
申请号 EP20030256892 申请日期 2003.10.30
申请人 ASML NETHERLANDS B.V. 发明人 DEN BOEF, ARIE JEFFREY;VAN DER LAAN, HANS;VAN DIJSSELDONK, ANTONIUS JOHANNES JOSEPHUS;DUSA, MIRCEA;KIERS, ANTOINE GASTON MARIE
分类号 G03F7/20;G01M11/02;G01N21/47;(IPC1-7):G03F7/20 主分类号 G03F7/20
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