SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME

摘要

A process for producing a semiconductor device in which while maintaining the functions of an insulating film of low dielectric constant, incorporation of nitrogen in the formed film can be avoided. While holding the flow rate ratio of H2O to any one of silicon-containing organic compounds having a siloxane bond or a CH3 group at 4 or higher, film forming gases having the pressure thereof adjusted to 1.5 torr or higher are converted to plasma and reacted to thereby form an insulating film of low dielectric constant. Thereafter, the insulating film of low dielectric constant is either brought into contact with plasma of treatment gas containing at least any one of He, Ar, H2 and deuterium or heated at 400°C or above in an atmosphere of nitrogen gas or inert gas. In the formation of a barrier insulating film, the flow rate ratio of H2O to a silicon-containing organic compound is held at 12 or higher.