| 发明名称 |
Two-step magnetic tunnel junction stack deposition |
| 摘要 |
Magnetic tunnel junction devices can be fabricated using a two-step deposition process wherein respective portions of the magnetic tunnel junction stack are defined independently of one another.
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| 申请公布号 |
US2004087039(A1) |
申请公布日期 |
2004.05.06 |
| 申请号 |
US20030348235 |
申请日期 |
2003.01.21 |
| 申请人 |
GUPTA ARUNAVA;LOW KIA-SENG |
发明人 |
GUPTA ARUNAVA;LOW KIA-SENG |
| 分类号 |
H01F10/32;H01F41/30;H01L43/08;H01L43/12;(IPC1-7):H01L21/00 |
主分类号 |
H01F10/32 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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