发明名称 |
High resolution overlay alignment systems for imprint lithography |
摘要 |
A method of determining and correcting alignment during imprint lithography process is described. During an imprint lithographic process the template may be aligned with the substrate by the use of alignment marks disposed on both the template and substrate. The alignment may be determined and corrected for before the layer is processed.
|
申请公布号 |
US2004086793(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20030445863 |
申请日期 |
2003.05.27 |
申请人 |
UNIVERSITY OF TEXAS SYSTEM BOARD OF REGENTS, UT SYSTEM |
发明人 |
SREENIVASAN S. V.;CHOI BYUNG J.;COLBUM MATTHEW;BAILEY TODD |
分类号 |
G02B5/18;B29C35/08;B29C37/00;G03F7/00;G03F7/20;H01L21/027;(IPC1-7):G03F9/00;G03C5/00;B41L7/00;B41L9/00;B41F7/00;B41L11/00;B41L1/00;G03B17/00 |
主分类号 |
G02B5/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|