摘要 |
<p>The invention relates to a device for purifying exhaust gas preferably resulting from processes involved in the semiconductor technique. Said device comprises a reaction chamber which is provided with at least one inlet for the exhaust gas to be purified, at least one inlet for the gaseous reaction partners and one outlet for the reaction products. Washing means for washing gaseous harmful substances, aerosols, and solid particles, are arranged downstream from the reaction chamber. The invention also relates to a method for purifying exhaust gas. The aim of the invention is to create a device and a method by which means the purification of exhaust gas can be carried out in a significantly cheaper manner. According to the invention, a plasma source (3) is coupled to the upper end of the reaction chamber (4), said plasma source (3) being connected to a magnetron (1) for introducing microwave energy into the plasma of the plasma source (3). The inlet (6) for the gaseous reaction partner is located on the plasma source (3). The reaction chamber (4) and the plasma source (3) can be evacuated to a pre-determined value, at least temporarily, in order to ignite the plasma in the plasma source (3). Washing means (12) for washing gaseous harmful substances, aerosols, and solid materials, are directly connected to the reaction chamber (4).</p> |
申请人 |
CENTROTHERM ELEKTRISCHE ANLAGEN GMBH + CO. |
发明人 |
KROEDEL, GUNTER;RESCH, DIETMAR;STELZER, HORST;FABIAN, LUTZ;SENG, HOLGER |