发明名称 |
METHOD IN RAPID CYCLE CHAMBER HAVING A TOP VENT WITH NITROGEN PURGE |
摘要 |
A chamber for transitioning a semiconductor substrate between modules operating at different pressures is provided. The chamber includes a base defining an outlet. The outlet permits removal of an atmosphere within the chamber to create a vacuum. A substrate support for supporting a semiconductor substrate within the chamber is included. A chamber top having an inlet is included. The inlet is configured to allow for the introduction of a gas into the chamber to displace moisture in a region defined above the substrate support. Sidewalls extending from the base to the chamber top are included. The sidewalls include access ports for entry and exit of a semiconductor substrate from the chamber. A method for conditioning an environment above a region of a semiconductor substrate within a pressure varying interface is also provided. |
申请公布号 |
EP1415013(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
EP20020773164 |
申请日期 |
2002.07.30 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HALSEY, HARLAN, I.;JACOB, DAVID, E. |
分类号 |
B65G49/00;C23C14/56;C23C16/44;H01L21/00;H01L21/677;(IPC1-7):C23C14/56 |
主分类号 |
B65G49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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