发明名称 METHOD IN RAPID CYCLE CHAMBER HAVING A TOP VENT WITH NITROGEN PURGE
摘要 A chamber for transitioning a semiconductor substrate between modules operating at different pressures is provided. The chamber includes a base defining an outlet. The outlet permits removal of an atmosphere within the chamber to create a vacuum. A substrate support for supporting a semiconductor substrate within the chamber is included. A chamber top having an inlet is included. The inlet is configured to allow for the introduction of a gas into the chamber to displace moisture in a region defined above the substrate support. Sidewalls extending from the base to the chamber top are included. The sidewalls include access ports for entry and exit of a semiconductor substrate from the chamber. A method for conditioning an environment above a region of a semiconductor substrate within a pressure varying interface is also provided.
申请公布号 EP1415013(A1) 申请公布日期 2004.05.06
申请号 EP20020773164 申请日期 2002.07.30
申请人 LAM RESEARCH CORPORATION 发明人 HALSEY, HARLAN, I.;JACOB, DAVID, E.
分类号 B65G49/00;C23C14/56;C23C16/44;H01L21/00;H01L21/677;(IPC1-7):C23C14/56 主分类号 B65G49/00
代理机构 代理人
主权项
地址