发明名称 |
Method of etching a silicon-containing dielectric material |
摘要 |
Disclosed herein is a method of pattern etching a layer of a silicon-containing dielectric material. The method employs a plasma source gas including CF4 to CHF3, where the volumetric ratio of CF4 to CHF3 is within the range of about 2:3 to about 3:1; more typically, about 1:1 to about 2:1. Etching is performed at a process chamber pressure within the range of about 4 mTorr to about 60 mTorr. The method provides a selectivity for etching a silicon-containing dielectric layer relative to photoresist of 1.5:1 or better. The method also provides an etch profile sidewall angle ranging from 88° to 92° between said etched silicon-containing dielectric layer and an underlying horizontal layer. in the semiconductor structure. The method provides a smooth sidewall when used in combination with certain photoresists which are sensitive to 193 nm radiation.
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申请公布号 |
US2004087153(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20020286676 |
申请日期 |
2002.10.31 |
申请人 |
DU YAN;SHEN MEIHUA;DESHMUKH SHASHANK |
发明人 |
DU YAN;SHEN MEIHUA;DESHMUKH SHASHANK |
分类号 |
H01J37/32;H01L21/311;H01L21/3213;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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