发明名称 |
Method of manufacturing semiconductor device |
摘要 |
In a semiconductor device having a semiconductor film crystallized by using a metal element, it is an object to provide a technique for reducing the crystal defects in a semiconductor film, and a technique for forming a semiconductor film with high crystallinity by effectively removing impurity metal elements. An amorphous semiconductor film is formed over a transparent substrate; the amorphous semiconductor film is crystallized by using metal elements; a crystalline semiconductor film is irradiated with a first laser beam in a direction from the semiconductor film to the substrate, thereby partly melted and crystallized; and the semiconductor film is irradiated with a second laser beam through the substrate in a direction from the substrate film to the semiconductor film.
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申请公布号 |
US2004087156(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20030685380 |
申请日期 |
2003.10.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MAEKAWA SHINJI |
分类号 |
H01L21/302;H01L21/322;H01L21/336;H01L21/461;H01L21/768;H01L21/77;H01L21/84;H01L29/49;H01L29/786;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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