发明名称 MAGNETIC DIFFERENTIAL FIELD SENSOR USING HYSTERESIS FIELD IN AMR FILMS
摘要 <p>A method and system for detecting a magnetic field utilizing a magnetoresistor (100) of a magnetic sensor are described herein. A normalized magnetoresistance associated with the magnetoresistor (100) can be calculated such that the magnetoresistor (100) comprises an initial magnetization direction thereof. The magnetic field is generally permitted to exceed (408) an ability of the magnetoresistor (100) to remain pointed in the initial magnetization direction, thereby enabling the magnetoresistor (100) to experience a magnetization reversal (300) thereof. The normalized resistance may be placed into a new state in response to the magnetization reversal (300) thereof, thereby permitting the normalized resistance to be utilized as a switch thereof and allowing the magnetic sensor to detect changes in the magnetic field associated with the magnetoresistor (100).</p>
申请公布号 WO2004038441(A1) 申请公布日期 2004.05.06
申请号 WO2003US33191 申请日期 2003.10.17
申请人 HONEYWELL INTERNATIONAL INC. 发明人 HAJI-SHEIKH, MICHAEL, J.;CHANDLER, RONALD, W.
分类号 G01R33/09;(IPC1-7):G01R33/09 主分类号 G01R33/09
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