发明名称 |
SEMICONDUCTOR STRUCTURE IMPLEMENTING SACRIFICIAL MATERIAL AND METHODS FOR MAKING AND IMPLEMENTING THE SAME |
摘要 |
<p>Methods of fabricating semiconductor structures on a substrate, where the substrate has transistors formed thereon, are provided. One method includes forming interconnect metallization structures in a plurality of levels. The forming of the interconnect metallization structures includes depositing a sacrificial layer and performing a process to etch trenches, vias, and stubs into the sacrificial layer. The method further includes filling and planarizing the trenches, vias, and stubs that were etched and then etching away the sacrificial layer throughout the plurality of levels of the interconnect metallization structures. The etching leaving a voided interconnect metallization structure that is structurally supported by stubs that are non-electrically functional.</p> |
申请公布号 |
EP1415344(A2) |
申请公布日期 |
2004.05.06 |
申请号 |
EP20020760997 |
申请日期 |
2002.03.26 |
申请人 |
LAM RESEARCH CORPORATION;GOTKIS, YEHIEL;WEI, DAVID;KISTLER, RODNEY |
发明人 |
GOTKIS, YEHIEL;WEI, DAVID;KISTLER, RODNEY |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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