METHOD FOR PRODUCING SEMI-CONDUCTING DEVICES AND DEVICES OBTAINED WITH THIS METHOD

摘要

The invention concerns a method for producing a semi-conducting device comprising at least a layer doped with a doping agent and a layer of another type deposited on said doped layer in a single reaction chamber. The deposition steps of these layers are separated by an operation for avoiding the contamination by the doping agent of said another layer. Advantageously, said operation comprises a dosing of the reaction chamber with a compound able to react with the doping agent.