发明名称 |
Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode |
摘要 |
A phase changeable memory device includes a substrate having a lower electrode disposed thereon. A phase changeable pattern is disposed on the lower electrode and an upper electrode is disposed on the phase changeable pattern that has a tip that extends therefrom and is directed toward the lower electrode.
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申请公布号 |
US2004085833(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20030695553 |
申请日期 |
2003.10.28 |
申请人 |
HWANG YOUNG-NAM;LEE SE-HO |
发明人 |
HWANG YOUNG-NAM;LEE SE-HO |
分类号 |
G11C13/00;G11C16/02;H01L27/10;H01L27/115;H01L45/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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