发明名称 Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode
摘要 A phase changeable memory device includes a substrate having a lower electrode disposed thereon. A phase changeable pattern is disposed on the lower electrode and an upper electrode is disposed on the phase changeable pattern that has a tip that extends therefrom and is directed toward the lower electrode.
申请公布号 US2004085833(A1) 申请公布日期 2004.05.06
申请号 US20030695553 申请日期 2003.10.28
申请人 HWANG YOUNG-NAM;LEE SE-HO 发明人 HWANG YOUNG-NAM;LEE SE-HO
分类号 G11C13/00;G11C16/02;H01L27/10;H01L27/115;H01L45/00;(IPC1-7):G11C29/00 主分类号 G11C13/00
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