发明名称 |
Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof |
摘要 |
A semiconductor device having a semiconductor substrate; an insulating film formed on said semiconductor substrate; a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on the insulating film; a first hydrogen barrier film; a first inter-layer insulating film covering said ferroelectric capacitor; and a second inter-layer insulating film stacked on the first inter-layer insulating film, the first hydrogen barrier film being interposed between the first and second interlayer insulating films is proposed.
|
申请公布号 |
US2004084701(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20030602764 |
申请日期 |
2003.06.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KANAYA HIROYUKI;MORIMOTO TOYOTA;HIDAKA OSAMU;KUMURA YOSHINORI;KUNISHIMA IWAO;IWAMOTO TSUYOSHI |
分类号 |
H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|