One time programmable multibit memory cells

摘要

The memory has a memorizing unit made up of polycrystalline silicon resistances (Rp1-Rp6) in series between two input-output terminals (11, 12). A load (Rf) is connected in series with the resistive unit, and a mid-point of this association in series constitutes a reading terminal of the memory. The respective mid-points (14, 15, 17-19) between the resistances of the memorizing unit are accessible. An Independent claim is also included for a read-out circuit of a cell memory.