发明名称 |
Method of manufacturing an on-chip inductor having improved quality factor |
摘要 |
An on-chip inductor may be fabricated by creating at least one dielectric layer, creating at least one conductive winding on the at least one dielectric layer and creating: (1) a P-well layer having a major surface parallel to a major surface of the dielectric layer, (2) field oxide layer having a major surface parallel to a major surface of the dielectric layer, (3) P-well and field oxide layer, or (4) a poly-silicon layer having a major surface parallel to a major surface of the dielectric layer.
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申请公布号 |
US2004087099(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20030673874 |
申请日期 |
2003.09.29 |
申请人 |
CONTOPANAGOS HARRY;KOMNINAKIS CHRISTOS;KYRIAZIDOU SISSY |
发明人 |
CONTOPANAGOS HARRY;KOMNINAKIS CHRISTOS;KYRIAZIDOU SISSY |
分类号 |
H04B1/40;(IPC1-7):H01L21/20 |
主分类号 |
H04B1/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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