发明名称 Method of manufacturing an on-chip inductor having improved quality factor
摘要 An on-chip inductor may be fabricated by creating at least one dielectric layer, creating at least one conductive winding on the at least one dielectric layer and creating: (1) a P-well layer having a major surface parallel to a major surface of the dielectric layer, (2) field oxide layer having a major surface parallel to a major surface of the dielectric layer, (3) P-well and field oxide layer, or (4) a poly-silicon layer having a major surface parallel to a major surface of the dielectric layer.
申请公布号 US2004087099(A1) 申请公布日期 2004.05.06
申请号 US20030673874 申请日期 2003.09.29
申请人 CONTOPANAGOS HARRY;KOMNINAKIS CHRISTOS;KYRIAZIDOU SISSY 发明人 CONTOPANAGOS HARRY;KOMNINAKIS CHRISTOS;KYRIAZIDOU SISSY
分类号 H04B1/40;(IPC1-7):H01L21/20 主分类号 H04B1/40
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