发明名称 |
Method for controlling a recess etch process |
摘要 |
A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtaining a measured net reflectance of at least a portion of the substrate including the trench, computing a modeled net reflectance of the portion of the substrate as a weighted incoherent sum of reflectances from n>=1 different regions constituting the portion of the substrate, determining a set of parameters that provides a close match between the measured net reflectance and the modeled net reflectance, and extracting the first dimension from the set of parameters; computing an endpoint of the process as a function of the first dimension and a desired recess depth measured from the reference point; and etching down from a surface of the column of material until the endpoint is reached.
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申请公布号 |
US2004087041(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20020286409 |
申请日期 |
2002.11.01 |
申请人 |
PERRY ANDREW J.;VENUGOPAL VIJAYAKUMAR C. |
发明人 |
PERRY ANDREW J.;VENUGOPAL VIJAYAKUMAR C. |
分类号 |
G01B11/06;G01N21/84;(IPC1-7):H01L21/00 |
主分类号 |
G01B11/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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