| 摘要 |
A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is reacted with a diborane gas 13 diluted with a hydrogen gas, thereby forming a boron nitride film 15 on a substrate 4. Thus, the boron nitride film 15 excellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant kappa can be formed speedily.
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