| 摘要 |
A method and structure for changing an electrical resistance of a resistor. Initially, the resistor is provided, wherein the resistor has a length L and an electrical resistance R1. A portion of the resistor is exposed to a laser radiation, wherein the portion includes a fraction F of the length L of the resistor. Both F=1 and F<1 are within the scope of the present invention. After the resistor has been exposed to the laser radiation, the resistor has an electrical resistance R2, wherein R2 is unequal to R1. The change in resistance from R1 to R2 is due to a heating of the resistor by the laser radiation, which causes a chemical or structural change within the resistor. Either R2>R1 or R2<R1 depending on the material composition of the resistor.
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