发明名称 Method and apparatus for projection exposure and device manufacturing method
摘要 An exposure method is provided so that the dividend regions defined on a wafer are successively exposed using pulses of laser light emitted from an excimer laser light source in such a way that each region receives a different level of target exposure levels. And, transmittance of a course energy adjuster, having a number of neutral density filters, is adjusted so that a sub-divided region receiving the least number of exposure pulses can receive a pulse count that exceeds the minimum number of exposure pulses required for optimal exposure. During the process of scanning exposure, transmittance of the coarse energy adjuster is held constant so that, to compensate for variations in the pulse energy, the output power of the excimer laser light source is adjusted according to real-time data output from an integrator sensor.
申请公布号 US6730925(B1) 申请公布日期 2004.05.04
申请号 US20000711944 申请日期 2000.11.15
申请人 NIKON CORPORATION 发明人 OZAWA KEN
分类号 H01L21/027;G03F7/20;G03F7/22;(IPC1-7):G01N21/86 主分类号 H01L21/027
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