发明名称 Method for fabricating a barrier layer
摘要 A method of fabricating a barrier layer includes oxidizing a silicon-containing substrate to form a substrate oxide layer on the surface of the substrate, producing an oxygen-impervious layer at an interface between the substrate oxide layer and the substrate, and etching the substrate oxide layer until the underlying oxygen-impervious layer is uncovered.
申请公布号 US6730607(B2) 申请公布日期 2004.05.04
申请号 US20010882289 申请日期 2001.06.15
申请人 INFINEON TECHNOLOGIES AG 发明人 WURZER HELMUT;SCHREMS MARTIN;KRASEMANN ANKE;POMPL THOMAS
分类号 H01L21/316;H01L27/08;(IPC1-7):H01L21/302 主分类号 H01L21/316
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