发明名称 |
Method for fabricating a barrier layer |
摘要 |
A method of fabricating a barrier layer includes oxidizing a silicon-containing substrate to form a substrate oxide layer on the surface of the substrate, producing an oxygen-impervious layer at an interface between the substrate oxide layer and the substrate, and etching the substrate oxide layer until the underlying oxygen-impervious layer is uncovered.
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申请公布号 |
US6730607(B2) |
申请公布日期 |
2004.05.04 |
申请号 |
US20010882289 |
申请日期 |
2001.06.15 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
WURZER HELMUT;SCHREMS MARTIN;KRASEMANN ANKE;POMPL THOMAS |
分类号 |
H01L21/316;H01L27/08;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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