| 摘要 |
In CMP technology for planarizing an interlayer insulation film, a BPSG film, an insulation film for shallow trench isolation, or the like, in the production process of a semiconductor element, irregularities of a matter being polished, e.g. a silicon oxide film, are planarized efficiently at a high speed while suppressing the occurrence of polishing flaws on the substrate by employing a polishing pad having organic fibers exposed on the surface thereof abutting against the matter being polished. |
