发明名称 HIGH PRESSURE PROCESSING CHAMBER FOR MULTIPLE SEMICONDUCTOR SUBSTRATES
摘要 A high pressure processing chamber for processing multiple semiconductor substrates comprises a chamber housing, a cassette, and a chamber closure. The cassette is removably coupled to the chamber housing. The cassette is configured to accommodate at least two semiconductor substrates. The chamber closure is coupled to the chamber housing. The chamber closure is configured such that in operation the chamber closure seals with the chamber housing to provide an enclosure for high pressure processing of the semiconductor substrates.
申请公布号 KR20040037245(A) 申请公布日期 2004.05.04
申请号 KR20047004965 申请日期 2002.10.03
申请人 发明人
分类号 H01L21/304;B08B7/00;H01L21/00;H01L21/673 主分类号 H01L21/304
代理机构 代理人
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