| 发明名称 |
Low k dielectric materials with inherent copper ion migration barrier |
| 摘要 |
An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.
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| 申请公布号 |
US6730618(B2) |
申请公布日期 |
2004.05.04 |
| 申请号 |
US20020137009 |
申请日期 |
2002.05.01 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COHEN STEPHAN ALAN;FEGER CLAUDIUS;HEDRICK JEFFREY CURTIS;SHAW JANE MARGARET |
| 分类号 |
H01L21/20;H01L21/28;H01L21/312;H01L21/314;H01L23/532;H01L29/51;(IPC1-7):H01L21/31;H01L21/44 |
主分类号 |
H01L21/20 |
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