| 摘要 |
An integrated circuit device (60) including a first transistor (PMOS) of a first conductivity type and a second transistor (NMOS) of a second conductivity type that is complementary to the first conductivity type. The method includes the steps of forming a first gate stack (100), the first transistor including the first gate stack and forming a second gate stack (80), the second transistor including the second gate stack. The method further includes implanting a first drain extension region (107) at a first distance relative to the first gate stack, the first transistor including the first drain extension region, and the method includes implanting a second drain extension region (87) at a second distance relative to the second gate stack, the second transistor including the second drain extension region. The first distance is greater than the second distance.
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