发明名称 |
Silicon carbide semiconductor device and its manufacturing method |
摘要 |
A silicon carbide vertical MOSFET having low ON-resistance and high blocking voltage is provided. For this, a first deposition film (2) of low concentration silicon carbide of a first conductivity type is formed on the surface of a high concentration silicon carbide substrate (1) of a first conductivity type. Formed on the first deposition film (2) is a second deposition film (31) that comprises a high concentration gate region of a second conductivity type, with a first region removed selectively. A third deposition film (32) formed on the second deposition film, which comprises a second region that is wider than the selectively removed first region, a high concentration source region (5) of a first conductivity type and a low concentration gate region (11) of a second conductivity type. A low concentration base region (4) of a first conductivity type is formed in contact with the first deposition film (2) in the first and second regions. <IMAGE> |
申请公布号 |
AU2003275541(A8) |
申请公布日期 |
2004.05.04 |
申请号 |
AU20030275541 |
申请日期 |
2003.10.03 |
申请人 |
SANYO ELECTRIC CO., LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
SHINSUKE HARADA;TSUTOMU YATSUO;KENJI FUKUDA;MITSUO OKAMOTO;KAZUHIRO ADACHI;SEIJI SUZUKI |
分类号 |
H01L21/04;H01L29/10;H01L29/24;H01L29/423;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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