发明名称 Trace interconnect array having increased bandwidth by selective etching of traces and dielectric substrate
摘要 A tall-electrode trace interconnect array includes a dielectric support substrate for supporting least two tall-electrode trace conductors. A dielectric support structure on the support substrate supports outside longitudinal walls of the two tall-electrode trace conductors. The dielectric support structure is formed to be absent from a longitudinal space between the two tall-electrode trace conductors thereby defining an ambient air dielectric to reduce and control inter-electrode capacitance and increase resonant frequency and effective electrical bandwidth of the trace interconnect array. A method for forming the array is also disclosed.
申请公布号 US6731467(B1) 申请公布日期 2004.05.04
申请号 US20020302533 申请日期 2002.11.21
申请人 MAXTOR CORPORATION 发明人 BALAKRISHNAN ARUN
分类号 G11B5/48;H05K1/02;(IPC1-7):G11B5/48 主分类号 G11B5/48
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