发明名称 |
Trace interconnect array having increased bandwidth by selective etching of traces and dielectric substrate |
摘要 |
A tall-electrode trace interconnect array includes a dielectric support substrate for supporting least two tall-electrode trace conductors. A dielectric support structure on the support substrate supports outside longitudinal walls of the two tall-electrode trace conductors. The dielectric support structure is formed to be absent from a longitudinal space between the two tall-electrode trace conductors thereby defining an ambient air dielectric to reduce and control inter-electrode capacitance and increase resonant frequency and effective electrical bandwidth of the trace interconnect array. A method for forming the array is also disclosed.
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申请公布号 |
US6731467(B1) |
申请公布日期 |
2004.05.04 |
申请号 |
US20020302533 |
申请日期 |
2002.11.21 |
申请人 |
MAXTOR CORPORATION |
发明人 |
BALAKRISHNAN ARUN |
分类号 |
G11B5/48;H05K1/02;(IPC1-7):G11B5/48 |
主分类号 |
G11B5/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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