发明名称 |
Projection aligner, exposing method and semiconductor device |
摘要 |
In the present invention, a substrate with exposure light from an exposure light source is irradiated before a projection exposure beforehand. A reflectance of this exposure light from the substrate is measured. An appropriate intensity of exposure light for the substrate is determined by referring to the reflectance. Then, a mask pattern is projected onto the substrate by irradiating with exposure light of the determined intensity.
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申请公布号 |
US6731375(B2) |
申请公布日期 |
2004.05.04 |
申请号 |
US20010986353 |
申请日期 |
2001.11.08 |
申请人 |
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. |
发明人 |
HANAWA TETSURO |
分类号 |
G03F7/20;H01L21/027;(IPC1-7):G03B27/54 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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