发明名称 Refresh apparatus for semiconductor memory device, and refresh method thereof
摘要 A refresh apparatus for a semiconductor memory device and a refresh method thereof that can reduce a test time by simultaneously refreshing a normal cell and a redundant cell in one test mode is disclosed. The refresh apparatus for the semiconductor memory device may include a redundant cell refresh signal generator for generating a redundant cell refresh signal for refreshing a redundant cell when a refresh is requested in a test mode, a wordline enable signal generator for generating a normal main wordline enable signal and a redundant main wordline enable signal in response to the redundant cell refresh signal in a redundant cell test mode and a wordline driver for simultaneously refreshing the normal and redundant cells by simultaneously driving a normal main wordline and a redundant main wordline in response to the redundant cell refresh signal, the normal main wordline enable signal, the redundant main wordline enable signal and a row address in the redundant cell test mode.
申请公布号 US6731560(B2) 申请公布日期 2004.05.04
申请号 US20020313445 申请日期 2002.12.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOON SEOK CHEOL;LEE JAE JIN;KANG SANG HEE;KIM CHUL HO
分类号 G11C29/56;G11C11/401;G11C11/406;G11C11/408;G11C29/00;G11C29/24;(IPC1-7):G11C7/00 主分类号 G11C29/56
代理机构 代理人
主权项
地址