发明名称 |
Capacitor, semiconductor memory device, and method for manufacturing the same |
摘要 |
A capacitor includes: a lower electrode; a capacitor insulating film made of a metal oxide and formed on the lower electrode; an upper electrode formed on the capacitor insulating film; and a buried insulating film surrounding the lower electrode. The lower electrode includes a conductive barrier layer that prevents diffusion of oxygen, and an insulating barrier layer that prevents diffusion of hydrogen is formed so as to be in contact with at least a side surface of the conductive barrier layer in a side surface of the lower electrode.
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申请公布号 |
US6730951(B2) |
申请公布日期 |
2004.05.04 |
申请号 |
US20020175804 |
申请日期 |
2002.06.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAGANO YOSHIHISA;FUJII EIJI |
分类号 |
H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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