发明名称 Capacitor, semiconductor memory device, and method for manufacturing the same
摘要 A capacitor includes: a lower electrode; a capacitor insulating film made of a metal oxide and formed on the lower electrode; an upper electrode formed on the capacitor insulating film; and a buried insulating film surrounding the lower electrode. The lower electrode includes a conductive barrier layer that prevents diffusion of oxygen, and an insulating barrier layer that prevents diffusion of hydrogen is formed so as to be in contact with at least a side surface of the conductive barrier layer in a side surface of the lower electrode.
申请公布号 US6730951(B2) 申请公布日期 2004.05.04
申请号 US20020175804 申请日期 2002.06.21
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAGANO YOSHIHISA;FUJII EIJI
分类号 H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L27/108 主分类号 H01L21/02
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