发明名称 METHOD FOR TAPER-ETCHING CHROME LAYER TO FORM TAPER STRUCTURE OF GATE ELECTRODE, SOURCE/DRAIN ELECTRODE, AND DATA LINE
摘要 PURPOSE: A taper-etching method for a chrome layer is provided to improve reliability and durability of an LCD device by using a taper-etching method for fabricating the LCD device. CONSTITUTION: A metal layer is deposited on a substrate. A surface of the metal layer is processed by an oxygen plasma method. A photoresist(22) is coated on the metal layer. The photoresist is covered with a mask. A patterning process is performed by the mask. The metal layer is etched to form a taper structure by using the photoresist as a mask. The metal layer is used as a conductive layer of an LCD device. The metal layer is formed with chrome or molybdenum.
申请公布号 KR100431623(B1) 申请公布日期 2004.05.04
申请号 KR19960031994 申请日期 1996.07.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, GYEONG NAM
分类号 H01L21/30;(IPC1-7):H01L21/30 主分类号 H01L21/30
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