发明名称 |
METHOD FOR TAPER-ETCHING CHROME LAYER TO FORM TAPER STRUCTURE OF GATE ELECTRODE, SOURCE/DRAIN ELECTRODE, AND DATA LINE |
摘要 |
PURPOSE: A taper-etching method for a chrome layer is provided to improve reliability and durability of an LCD device by using a taper-etching method for fabricating the LCD device. CONSTITUTION: A metal layer is deposited on a substrate. A surface of the metal layer is processed by an oxygen plasma method. A photoresist(22) is coated on the metal layer. The photoresist is covered with a mask. A patterning process is performed by the mask. The metal layer is etched to form a taper structure by using the photoresist as a mask. The metal layer is used as a conductive layer of an LCD device. The metal layer is formed with chrome or molybdenum.
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申请公布号 |
KR100431623(B1) |
申请公布日期 |
2004.05.04 |
申请号 |
KR19960031994 |
申请日期 |
1996.07.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, GYEONG NAM |
分类号 |
H01L21/30;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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