INTEGRATED CIRCUIT TRANSISTOR WITH SEPARATE ANTI-PUNCHTHROUGH LAYER AND FORMING METHOD THEREOF

摘要

PURPOSE: An integrated circuit transistor with a separate anti-punchthrough layer is provided to control or reduce a punchthrough effect by intercepting or decreasing erosion of a depletion region formed in a source/drain region that confronts an opposite source/drain region of a MOS(metal oxide semiconductor) transistor. CONSTITUTION: A gate electrode(315) is formed on a semiconductor substrate(300). A source/drain region is formed in the semiconductor substrate, adjacent to the gate electrode. The anti-punchthrough layer is of a type that is separated from the semiconductor substrate, adjacent to the source/drain region.