BANDGAP TUNING OF SEMICONDUCTOR QUANTUM WELL STRUCTURES

摘要

A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the disordered region is formed, so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. Repeating, the disordering followed by annealing allows for a greater range in bandgap tuning. The heterostructures of interest are III- V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.