| 发明名称 |
Method for generating oxide layers on semiconductor substrates |
| 摘要 |
A method is disclosed for generating oxide layers on metal surfaces on semiconductor substrates. The method comprising forming a solution by dissolving ozone in a liquid, and reacting the said solution with said surface at a selected point-of-use temperature, which is higher than ambient temperature. |
| 申请公布号 |
AU2003276093(A8) |
申请公布日期 |
2004.05.04 |
| 申请号 |
AU20030276093 |
申请日期 |
2003.10.10 |
| 申请人 |
SEZ AG |
发明人 |
REINHARD SELLMER;KLAUS KOLLER;JORG LEBERZAMMER |
| 分类号 |
H01L21/316;H01L21/768;H01L23/485 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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