发明名称 Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device
摘要 Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colors which can be combined, particularly to obtain white light.Method for preparing this layer.Light emitting diode (LED), particularly a LED emitting white light comprising such a thin layer in its active zone, and lighting device comprising such a diode.
申请公布号 US6730943(B2) 申请公布日期 2004.05.04
申请号 US20020257515 申请日期 2002.10.11
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE 发明人 MASSIES JEAN CLAUDE;GRANDJEAN NICOLAS PIERRE;DAMILANO BENJAMIN GERARD PIERRE
分类号 H01L33/00;H01L33/06;H01L33/08;H01L33/32;(IPC1-7):H01L33/00 主分类号 H01L33/00
代理机构 代理人
主权项
地址