发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING PROVISIONAL AND PERMANENT SUBSTRATES |
摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to simplify manufacturing processes and to reduce fabrication cost by separating previously chips from each other using a provisional substrate. CONSTITUTION: A semiconductor device structure is formed on a selected provisional substrate(100,120). The structure of the semiconductor device is divided into a plurality of discrete units by using a physical or chemical method(130). The plurality of discrete units are attached on a selected permanent substrate(140). The provisional substrate is removed from the discrete units(150).
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申请公布号 |
KR20040036825(A) |
申请公布日期 |
2004.05.03 |
申请号 |
KR20020065494 |
申请日期 |
2002.10.25 |
申请人 |
ADVANCED EPITAXY TECHNOLOGY |
发明人 |
GUO JAN DAR;CHEN TSUNG YU;CHUANG HUI WEN;TSANG JIAN SHIHN;TSAI WEN CHUNG;CHAN SHIH HSIUNG |
分类号 |
H01L21/78;(IPC1-7):H01L21/78 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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