发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING PROVISIONAL AND PERMANENT SUBSTRATES
摘要 PURPOSE: A method of manufacturing a semiconductor device is provided to simplify manufacturing processes and to reduce fabrication cost by separating previously chips from each other using a provisional substrate. CONSTITUTION: A semiconductor device structure is formed on a selected provisional substrate(100,120). The structure of the semiconductor device is divided into a plurality of discrete units by using a physical or chemical method(130). The plurality of discrete units are attached on a selected permanent substrate(140). The provisional substrate is removed from the discrete units(150).
申请公布号 KR20040036825(A) 申请公布日期 2004.05.03
申请号 KR20020065494 申请日期 2002.10.25
申请人 ADVANCED EPITAXY TECHNOLOGY 发明人 GUO JAN DAR;CHEN TSUNG YU;CHUANG HUI WEN;TSANG JIAN SHIHN;TSAI WEN CHUNG;CHAN SHIH HSIUNG
分类号 H01L21/78;(IPC1-7):H01L21/78 主分类号 H01L21/78
代理机构 代理人
主权项
地址