| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent a junction leakage and a hump from being generated by forming an oxide layer pattern at an interface between an active region and a field region. CONSTITUTION: A pad oxide layer and a pad nitride layer are sequentially formed on a silicon substrate(31) having an active region and a field region. The pad nitride layer and the pad oxide layer are patterned to expose the field region. The exposed field region is etched to form a trench. An oxide layer is filled in the trench. The pad nitride layer is removed. An oxide layer pattern is formed to cover the field region and the active region adjacent to the field region. A cleaning process is performed on the resultant structure to eliminate the oxide layer pattern and the pad oxide layer.
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