| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to control a loss of an isolation layer at an interface between an active region and a field region and to prevent a leakage current and a hump from being generated by making a pad oxide layer remain at the interface between the active region and the field region. CONSTITUTION: A pad oxide layer and a pad nitride layer are sequentially formed on a silicon substrate(31) having an active region and a field region. The pad nitride layer and the pad oxide layer are patterned to expose the field region of the substrate. The exposed field region is etched to form a trench(34). An oxide layer is filled in the trench. The pad nitride layer is removed. An etch barrier is formed to cover the field region and the active region adjacent to the field region. The exposed pad oxide layer is eliminated by using the etch barrier so that the pad oxide layer remains at the interface between the active region and the field region. The etch barrier is eliminated.
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