| 摘要 |
PURPOSE: A method for depositing silicon by a high-density plasma CVD(Chemical Vapor Deposition) technique is provided to supply hydrogen and silane under predetermined conditions, and to deposit poly silicon when the predetermined conditions are satisfied, then to supply hydrogen gas with silane gas together, thereby realizing a fast deposition speed. CONSTITUTION: A system firstly supplies hydrogen plasma, and performs a surface treatment for a membrane(S201). The system supplies hydrogen and silane under predetermined conditions(S202). If the supplying of hydrogen and silane satisfies the predetermined conditions(S203), the system deposits poly silicon(S204). If the supplying of hydrogen and silane does not satisfy the predetermined conditions, the system deposits amorphous silicon(S205). The system carries out a thermal treatment, and executes a crystallization step(S206). |
