| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device which is capable of preventing leaking output signals from being fed back to input signals and reducing a gain deterioration in an amplifier. SOLUTION: Output signals leaking from output terminals 104a and 104b are made to flow into a conductor layer 105 through parasitic capacitors C11a and C11b, board resistors R11a and R11b, and a conductor 111. The leaking signals are differential signals that are equal in amplitude and opposed in phase, so that the conductor layer 105 functions as a virtual ground point to the leaking signals, and the leaking signals are short-circuited. Therefore, the signals leaking from the output terminals 104a and 104b can be restrained from being fed back to the input terminals 103a and 103b, and the high-frequency semiconductor device capable of reducing a gain deterioration can be obtained. COPYRIGHT: (C)2004,JPO
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