| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce resistivity in a p-type group III nitride-based compound semiconductor layer. <P>SOLUTION: On a first group III nitride-based compound semiconductor layer, where p-type impurities are added, a second group III nitride-based compound semiconductor layer, where no impurities are added or n-type impurities or n- and p-type impurities are added, is formed. Resistance-lowering treatment is conducted by heat treatment, during or after the formation of the second group III nitride-based compound semiconductor layer. <P>COPYRIGHT: (C)2004,JPO |
