| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning liquid for photolithography capable of not only peeling photoresist patterns of thick films used particularly for formation of bumps etc., from a substrate but also rapidly and completely dissolving the peeled photoresist patterns in the cleaning liquid so as to prevent the readhesion thereof to the substrate and a method for processing the substrate. SOLUTION: The invention relates to the cleaning liquid for peeling/dissolving the photoresist patterns of a film thickness 10 to 150μm, and for photolithography containing (a) 0.5 to 15 mass% quaternary ammonium hydroxide (tetrapropyl ammonium hydroxide, tetrabutyl ammonium hydroxide, etc.), (b) 65 to 97 mass% water-soluble organic solvent (dimethylsulfoxide or a solvent mixture composed of the same and N-methyl-2-pyrrolidone, sulfolane, etc.), and (c) 0.5 to 30mass% water and the method for processing the substrate. COPYRIGHT: (C)2004,JPO
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