| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of removing photoresist, by which residual photoresist on side faces and a bottom face as well as a top face of a wafer can be removed efficiently, by ashing without time delays, after the wafer has been properly heated. SOLUTION: The method of removing the photoresist comprises the steps of transferring the wafer 80 into a process chamber 150; allowing the wafer to arrive safe on a top face of a wafer stage 156 inside the process chamber; heating the wafer, arriving safe on the top face of the wafer stage to 210-230°C, using a heater installed in the wafer stage; making the heated wafer move up above the top face of the wafer stage so that the bottom face of the wafer is exposed; after moving the heated wafer above the top face of the wafer stage, generating a plasma in the process chamber to simultaneously remove the photoresist from the top face, side faces, and bottom face of the wafer. COPYRIGHT: (C)2004,JPO
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