发明名称 CHARGE PUMP FOR FLASH MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a charge pump of a flash memory for maintaining normal operation by preventing a breakdown of a capacitor and a transistor. SOLUTION: This charge pump consists of a conductive circuit, first, second and third charging elements. The conductive circuit includes first, second and third output terminals and a plurality of conductive elements. One of the plurality of conductive elements comprises positive and negative terminals connected to the first and the second output terminals. In another plurality of conductive elements, the positive and the negative terminals are connected to the second and the third output terminals. The charging elements comprise both ends, one end of the first charging element is connected to the first output terminal, one end of the second charging element is connected to the second output element, one end of the third charging element is connected to te third output terminal, and the other end of the third charging element is connected to the first output terminal and substantially forms a short-circuit with the first output terminal. After an electric charge is stored in the first charging element, the voltage of one end which is connected to the first output terminal of the third charging element is made substantially different from that of the one end which is not connected to the first output terminal of the first charging element. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004135414(A) 申请公布日期 2004.04.30
申请号 JP20020296617 申请日期 2002.10.09
申请人 EMEMORY TECHNOLOGY INC 发明人 O ITEI;RYO IBU;SO BUNSEKI
分类号 H02M3/07;(IPC1-7):H02M3/07 主分类号 H02M3/07
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