| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an LED with enhanced light-emitting efficiency by reducing internal reflection, and a method of manufacturing the same. <P>SOLUTION: The LED 40 comprises a substrate 42, an n-type compound semiconductor layer 44 formed on the substrate 42, an active layer 46 formed on the n-type compound semiconductor layer 44, a p-type compound semiconductor layer 48 formed on the active layer 46, an n-type electrode 52 so arranged as to contact the n-type compound semiconductor layer 44, and a p-type electrode 50 so arranged as to contact the p-type compound semiconductor layer 48, wherein at least the surface, from which the light generated in the active layer 46 is emitted, is a continuous curved plane. With such a construction, the light quantity totally reflected at the surface of the active layer 46 toward the inside of the active layer 46 can be reduced. As a consequence, the light-emitting efficiency from the active layer 46 is enhanced much more than that by prior arts, and the total quantity, as well as the uniformity in the light-emitting directions, of the light measured in the outside is enhanced. The structure is economical since any other additional process is not necessary in relation to the wave shape. <P>COPYRIGHT: (C)2004,JPO |
