| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-density light emitting diode which has low-resistance and high-output characteristics by fully utilizing the merit of the center electrode type light emitting dots which can effectively extract the light emitting element just under the electrode having the highest optical output. <P>SOLUTION: Shape of a light extracting region 1 of each light emitting dot 20 is set to a square or a rectangular which is extended in the arrangement direction. Two pairs of electrode contact layer 3 and electrode 2 in which the light extracting region 1 is divided into three portions in the arrangement direction (x direction) of the light emitting dots are arranged in each light extracting region 1, so that the entire part of the two pairs of electrodes are located at almost the center of the light extracting region 1. Accordingly, the light extracting region domains 1a, 1b, 1c of the rectangular shape having the short side in the arrangement direction are formed in both sides of the arrangement direction of each electrode 2. <P>COPYRIGHT: (C)2004,JPO |
