| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce an area for one capacitive element in a semiconductor device having capacitive elements. <P>SOLUTION: A capacitive element 19 comprising a lower electrode 16, a capacitive dielectric film 17, and an upper electrode 18 is provided to be above a conductive plug 13 provided on a source diffusion region 30a of a MOS transistor 30. The capacitive dielectric film 17 is formed along a bottom and a wall surface of an opening 15a for exposing an oxygen barrier film 14 provided on a second interlayer dielectric film 15, as a result a bent 17a that bends in a through direction of the conductive plug 13 is formed. <P>COPYRIGHT: (C)2004,JPO |
