发明名称 PHOTOELECTRIC CONVERTER
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a photoelectric converter which can improve an open voltage. <P>SOLUTION: This photoelectric converter includes a n-type layer 4 and a p-type 6 made of a microcrystal silicon (μc-Si) formed on a main surface 1a of a substrate 1, and an i-type layer 5 formed between the layer 4 and the layer 6 and made of a substantially intrinsic microcrystal silicon (μc-Si). A major direction of crystal grains included in the layer 4 is a substantially parallel to the main surface 1a of the substrate 1. A major direction of the crystal grains included in the layer 5 in a boundary between the layer 6 and the layers 4, 6 is substantially perpendicular to the main surface 1a of the substrate 1. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004134432(A) 申请公布日期 2004.04.30
申请号 JP20020294635 申请日期 2002.10.08
申请人 SANYO ELECTRIC CO LTD 发明人 SHIMA MASAKI;TAIRA SHIGEJI
分类号 H01L31/04;H01L27/00;H01L31/00;H01L31/0368;H01L31/075;(IPC1-7):H01L31/04 主分类号 H01L31/04
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