| 摘要 |
PROBLEM TO BE SOLVED: To provide a complementary magnetic storage device wherein writing of storage data to a pair of ferromagnetic tunnel junction elements can be accurately performed to enhance reliability. SOLUTION: In the complementary magnetic storage device wherein storage data contrary to each other are stored to first and second ferromagnetic tunnel junction elements, the first and the second ferromagnetic tunnel junction elements are formed on a semiconductor substrate adjacently to each other, first and second coil-shaped wirings for writing are formed at the surroundings of the first and the second ferromagnetic tunnel junction elements, respectively, and the winding directions of the first and the second wirings for writing are made reverse to each other. COPYRIGHT: (C)2004,JPO |
