MOS TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A MOS(metal oxide semiconductor) transistor is provided to improve the operating speed by reducing the short channel effect and the junction capacitance of the source/drain. CONSTITUTION: A semiconductor substrate(10) is prepared. A gate structure(25) in which a gate insulation layer(12) and a gate electrode(18) are sequentially formed is formed on the semiconductor substrate. The first insulation layer(22) is formed on the upper and side surfaces of the gate structure. The second insulation layer(26) is formed on the substrate, separated from the first insulation layer. A lightly-doped source/drain region(28) is formed in the surface of the semiconductor substrate between the second insulation layer and the gate structure. A source/drain extension layer(30) is formed on the low density source/drain region. A heavily-doped source/drain region(34) is formed on the second insulation layer so as to be connected to the source/drain extension layer.